Title :
Silicon on nanocrystalline and microcrystalline diamond stacking structure for power supply on chip
Author :
Yamada, Tomoaki ; Hasegawa, Mikio
Author_Institution :
Nanotube Res. Center, Nat. Inst. of Adv., Tsukuba, Japan
Abstract :
We proposed a stacking structure of nanocrystalline diamond (NCD) and microcrystalline diamond (MCD) films for an insulating material of silicon-on-insulator (SOI) substrate. NCD was deposited on Si wafer substrates by surface wave plasma CVD and then MCD was deposited on as-grown NCD surface. The break down field of the stacking structure was three times higher than that of MCD layers. The thermal conductivities were in the range from 320 to 500W/mK, which were almost same as MCD layer.
Keywords :
diamond; elemental semiconductors; insulating thin films; nanostructured materials; plasma CVD; power supply circuits; semiconductor growth; silicon; silicon-on-insulator; thermal conductivity; thermal insulating materials; MCD film; NCD film; SOl substrate; Si-C; insulating material; microcrystalline diamond stacking structure; nanocrystalline diamond stacking structure; power supply on chip; silicon-on-insulator substrate; surface wave plasma CVD; thermal conductivity; wafer substrate; Current measurement; Films; Microscopy; Pollution measurement; Silicon; Substrates; Thickness measurement; Chemical vapor deposition; Microcrystalline diamojd; Nanocrystalline diamond; Stacking strcuture;
Conference_Titel :
Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International
Conference_Location :
Hiroshima
DOI :
10.1109/IPEC.2014.6869896
