Full silicon carbide boost chopper module for high frequency and high temperature operation

This paper presents a 1200-V 20-A full silicon carbide boost chopper module designed for high temperature and high frequency operation. The developed module is based on one silicon carbide metal oxide semiconductor field effect transistor chip and two parallel connected silicon carbide schottky diode chips manufactured by Cree, Inc. The static and dynamic characteristics of the module have been experimentally determined and its performance tested in a 2-kW boost converter. The test results show that the developed module performs well and is able to provide a good conversion efficiency even at high switching frequency.