Title :
Development of ultrahigh voltage SiC power devices
Author :
Fukuda, Kenji ; Okamoto, Dai ; Harada, Shingo ; Tanaka, Yuichi ; Yonezawa, Yoshiyuki ; Deguchi, Tadayoshi ; Katakami, Shuji ; Ishimori, Hitoshi ; Takasu, Shinji ; Arai, Manabu ; Takenaka, Kana ; Fujisawa, Hiroyuki ; Takei, Manabu ; Matsumoto, Kaname ; Ohs
Author_Institution :
Adv. Power Electron. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
Ultrahigh voltage SiC devices and their package technology were investigated. As a result, we have succeeded in creating a 13kV level PiN diode without forward voltage degradation by using 4° off substrates and a 15kV level p-channel IGBT and 16kV level n-channel IGBT with a low differential specific on-resistance (Rdiff,on). Moreover, the results reveal that the nano-tech resin, improved resin and Si3N4 DBC substrate are the best materials for package at high temperature and ultrahigh voltage.
Keywords :
insulated gate bipolar transistors; p-i-n diodes; power semiconductor diodes; semiconductor device packaging; silicon compounds; wide band gap semiconductors; DBC substrate; PiN diode; Si3N4; SiC; differential specific on-resistance; n-channel IGBT; nano-tech resin; p-channel IGBT; package technology; ultrahigh voltage SiC power device; voltage 13 kV; voltage 15 kV; voltage 16 kV; Insulated gate bipolar transistors; Logic gates; MOSFET; Nickel; Nitrogen; Static VAr compensators; Substrates; PiN; SiC; ceramics DBC substrate; n-IGBT; p-IGBT; package technology; resin; ultrahigh voltage;
Conference_Titel :
Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International
Conference_Location :
Hiroshima
DOI :
10.1109/IPEC.2014.6869990
