Development of ultrahigh voltage SiC power devices

Author

Fukuda, Kenji ; Okamoto, Dai ; Harada, Shingo ; Tanaka, Yuichi ; Yonezawa, Yoshiyuki ; Deguchi, Tadayoshi ; Katakami, Shuji ; Ishimori, Hitoshi ; Takasu, Shinji ; Arai, Manabu ; Takenaka, Kana ; Fujisawa, Hiroyuki ; Takei, Manabu ; Matsumoto, Kaname ; Ohs

Author_Institution

Adv. Power Electron. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan

fYear

2014

fDate

18-21 May 2014

Firstpage

3440

Lastpage

3446

Abstract

Ultrahigh voltage SiC devices and their package technology were investigated. As a result, we have succeeded in creating a 13kV level PiN diode without forward voltage degradation by using 4° off substrates and a 15kV level p-channel IGBT and 16kV level n-channel IGBT with a low differential specific on-resistance (R_diff,on). Moreover, the results reveal that the nano-tech resin, improved resin and Si₃N₄ DBC substrate are the best materials for package at high temperature and ultrahigh voltage.

Keywords

insulated gate bipolar transistors; p-i-n diodes; power semiconductor diodes; semiconductor device packaging; silicon compounds; wide band gap semiconductors; DBC substrate; PiN diode; Si₃N₄; SiC; differential specific on-resistance; n-channel IGBT; nano-tech resin; p-channel IGBT; package technology; ultrahigh voltage SiC power device; voltage 13 kV; voltage 15 kV; voltage 16 kV; Insulated gate bipolar transistors; Logic gates; MOSFET; Nickel; Nitrogen; Static VAr compensators; Substrates; PiN; SiC; ceramics DBC substrate; n-IGBT; p-IGBT; package technology; resin; ultrahigh voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International

Conference_Location

Hiroshima

Type

conf

DOI

10.1109/IPEC.2014.6869990

Filename

6869990