Loss analysis and soft-switching characteristics of flyback-forward high gain DC/DC converter with GaN FET

Author

Zhang Yajing ; Zheng, Trillion Q. ; Li Yan

Author_Institution

Sch. of Electr. Eng., Beijing Jiaotong Univ., Beijing, China

fYear

2014

fDate

18-21 May 2014

Firstpage

2899

Lastpage

2903

Abstract

Compared with Si MOSFET, the GaN FET devices have advantages in the electrical characteristics, thermal properties and mechanical properties. This paper compares electrical properties of the GaN FET and Si MOSFET. Evaluation of the GaN FET based on flyback-forward high gain DC/DC converter at soft-switching condition are presented in detail. In addition, the power loss analysis of GaN FET based flyback-forward high gain DC/DC converter is discussed in detail. Finally a 200W GaN FET based flyback-forward high gain DC/DC converter is established, experiment results verified that the GaN FET is superior to the silicon MOSFET in switching characteristic and efficiency.

Keywords

DC-DC power convertors; III-V semiconductors; elemental semiconductors; electrical characteristics; flyback-forward high gain DC-DC converter; gallium nitride FET; loss analysis characteristics; mechanical properties; power 200 W; power loss analysis; soft-switching characteristics; thermal properties; Field effect transistors; Gallium nitride; Silicon; Switches; GaN FET; flyback-forward; high gain; loss analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International

Conference_Location

Hiroshima

Type

conf

DOI

10.1109/IPEC.2014.6870093

Filename

6870093