• DocumentCode
    1774611
  • Title

    Advantages of low parasitic inductance packages of power MOSFET for server power applications

  • Author

    Wonsuk Choi ; Dongkook Son ; Dongwook Kim

  • Author_Institution
    Fairchild Semicond., HV PCIA, Bucheon, South Korea
  • fYear
    2014
  • fDate
    18-21 May 2014
  • Firstpage
    2914
  • Lastpage
    2919
  • Abstract
    Super -junction MOSFETs and shielded gate trench MOSFETs are widely used especially for PFC and DC-DC converters for networking and computing power supply systems that require high efficiency and power density. With smaller parasitic capacitances, the latest SJ MOSFETs have extremely fast switching characteristics and therefore reduced switching losses. But, naturally this switching behavior leads to device stress include voltage and current spikes and greater dv/dt and di/dt by self-inflicted voltage transients during switching transition time due to the stray parasites in devices and printed circuit board. In this paper, the impact of parasitic inductances in Power MOSFET and PCB layout during switching transient by analytical Pspice simulation and experimental results The benefits of low inductance packages, called Power88 and Power 56, for high voltage and medium voltage MOSFETs are shown in server power system.
  • Keywords
    DC-DC power convertors; capacitance; inductance; isolation technology; power MOSFET; power factor correction; power supply quality; printed circuit layout; switching transients; DC-DC converters; PCB layout; PFC; SJ MOSFET; analytical Pspice simulation; computing power supply systems; current spikes; high voltage MOSFET Power88 package; low parasitic inductance package; medium voltage MOSFET Power56 package; power factor correction; printed circuit board; self-inflicted voltage transients; server power system; shielded gate trench MOSFET; stray parasitic capacitance; superjunction power MOSFET; switching loss reduction; switching transient; switching transition time; voltage spikes; Density measurement; Inductance; MOSFET; Power system measurements; Standards; Substrates; Switches; Power56/Power88 package; Server Power; Shielded gate trench MOSFET; Sper-junction MOSFET;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International
  • Conference_Location
    Hiroshima
  • Type

    conf

  • DOI
    10.1109/IPEC.2014.6870096
  • Filename
    6870096