• DocumentCode
    1774624
  • Title

    Advantage of super junction MOSFET for power supply application

  • Author

    Tabira, K. ; Watanabe, Shigetaka ; Shimatou, T. ; Watashima, T. ; Takenoiri, S.

  • Author_Institution
    Fuji Electr. Co., Ltd., Matsumoto, Japan
  • fYear
    2014
  • fDate
    18-21 May 2014
  • Firstpage
    2939
  • Lastpage
    2943
  • Abstract
    Characteristics of fast recovery diode (FRED) type super junction MOSFET (SJ-MOS) are reported. The reverse recovery ruggedness (-di/dt ruggedness) of the SJ-MOS FRED is dramatically improved compared to that of non-FRED type, which is almost 16 times better.
  • Keywords
    power MOSFET; power semiconductor diodes; power supply circuits; SJ-MOS FRED reverse recovery ruggedness; fast recovery diode; power supply application; super junction MOSFET; Digital TV; Logic gates; Fast recovery diode type; Super junction MOSFET; power supply efficiency; reverse recovery ruggedness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International
  • Conference_Location
    Hiroshima
  • Type

    conf

  • DOI
    10.1109/IPEC.2014.6870100
  • Filename
    6870100
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1774624