Low voltage PV power integration into medium voltage grid using high voltage SiC devices

Author

Chattopadhyay, Ritwik ; Bhattacharya, Surya ; Foureaux, Nicole C. ; Silva, Susana M. ; Braz Cardoso, F. ; De Paula, Helder ; Pires, Igor A. ; Cortizio, Porfirio C. ; Moraes, Lailson ; de S Brito, Jose Antonio

Author_Institution

Dept. of ECE, North Carolina State Univ., Raleigh, NC, USA

fYear

2014

fDate

18-21 May 2014

Firstpage

3225

Lastpage

3232

Abstract

High voltage high power semiconductor devices are being used for grid integration of renewable energy sources. 1200V, 100A SiC Mosfets, 10 kV SiC Mosfets and 10kV SiC JBS Diodes have proven to be beneficial for high voltage application. High Voltage SiC devices enable high switching frequency operation thus reducing size of passive elements. Scope of this paper focuses on an alternative approach for 0.9 MW PV power plant, which is currently being constructed in Brazil. Use of high power SiC devices for PV power plant for integration into 13.8 kV grid provides higher efficiency, reduction in size and volume.

Keywords

photovoltaic power systems; power MOSFET; power grids; power semiconductor diodes; silicon compounds; wide band gap semiconductors; Brazil; JBS diodes; Mosfets; PV power plant; SiC; current 100 A; grid integration; high switching frequency operation; high voltage high power semiconductor devices; low voltage PV power integration; medium voltage grid; passive elements; power 0.9 MW; renewable energy sources; voltage 10 kV; voltage 1200 V; voltage 13.8 kV; Arrays; Artificial intelligence; Inverters; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International

Conference_Location

Hiroshima

Type

conf

DOI

10.1109/IPEC.2014.6870149

Filename

6870149