Application of graphene oxide for reduction of thermal resistance of high-power laser diodes

Improvement of the removal efficiency of the upper (directed towards the n-side) heat flux from high-power laser diodes is proposed by providing the graphene-oxide (GO) deposit from the top of the p-downmounted chips. Resulting decrease of the device´s thermal resistance has been found in reduced red shift of the spectral characteristics connected with the drive current increase (compared with ´no GO deposit´ device). Providing GO in the form of aqueous suspension and then drying at room temperature is relatively easy and repeatable. Experimental step-by-step processing and characterisations indicate dominant heat removal from the chip´s side walls rather than from its n-contact surface.