Title :
Design of high efficiency GaN HEMT class-F power amplifier at S-band
Author :
Ying Wang ; Shiwei Dong ; Lisheng Yang ; Zhengjun Li ; Yazhou Dong ; Wenli Fu
Author_Institution :
Key Lab. for Spacecraft TT&C & Commun., Chongqing Univ., Chongqing, China
Abstract :
Microwave power transmission is one of the key technologies to realize solar power satellite. In this paper, the authors design a high efficiency GaN Class-F power amplifier at 2.45GHz. Power added efficiency is up to 78.8% and output power is 40.3dBm in simulation. Simulated results predict high performance of the proposed PA.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; microwave power amplifiers; microwave power transmission; solar power satellites; wide band gap semiconductors; GaN; S-band; frequency 2.45 GHz; gallium nitride HEMT class-F power amplifier design; high-electron mobility transistor; microwave power transmission; power added efficiency; solar power satellite; Gallium nitride; Harmonic analysis; Impedance; Microwave amplifiers; Power amplifiers; Power generation; Transistors; Class-F; GaN; Power Amplifier;
Conference_Titel :
Antennas and Propagation (APCAP), 2014 3rd Asia-Pacific Conference on
Conference_Location :
Harbin
Print_ISBN :
978-1-4799-4355-5
DOI :
10.1109/APCAP.2014.6992717
