Title :
100nm MHEMT transistor technology for W-band amplifier
Author :
Kang Yaohui ; Wang Weibo ; Gao jianfeng ; Chen Chen
Author_Institution :
Nat. Key Lab. of Monolithic Integrated Circuits & Modules, Nanjing Electron. Devices Inst., Nanjing, China
Abstract :
In this paper we analyze the 100 nm T-gate structure mechanics, develop the 100 nm MHFMT process with higher structure stability and present a four-stage W-band amplifier with 2×20μm gate width, the total chip size is 3.08× 3.62mm2. The amplifier were measured with a W-band onchip test, a linear gain of 20 dB at 98 GHz and more than 17dB over the bandwidth from 95 to 100 GHz was achieved for a drain voltage Vd of 1.5V and Vg of 0.9V.
Keywords :
circuit stability; high electron mobility transistors; millimetre wave amplifiers; millimetre wave field effect transistors; MHEMT transistor technology; T-gate structure mechanics; W-band on-chip test; bandwidth 95 GHz to 100 GHz; four-stage W-band amplifier; frequency 98 GHz; gain 20 dB; size 100 nm; structure stability; voltage 0.9 V; voltage 1.5 V; Foot; Force; Indium phosphide; Logic gates; MODFETs; mHEMTs; MHEMT; T-gate; W-band; amplifier; two step forming;
Conference_Titel :
Antennas and Propagation (APCAP), 2014 3rd Asia-Pacific Conference on
Conference_Location :
Harbin
Print_ISBN :
978-1-4799-4355-5
DOI :
10.1109/APCAP.2014.6992770
