DocumentCode
1775976
Title
Design of single crystal silicon based RF MEMS switch with high contact force
Author
Mei Di ; Wu Jing ; Yu YuanWei ; Zhang PeiRan ; Zhu Jian
Author_Institution
NanJing Electron. Devices Inst., Nanjing, China
fYear
2014
fDate
26-29 July 2014
Firstpage
1345
Lastpage
1347
Abstract
A metal contact RF MEMS switch based on single crystal silicon is presented in this article. Performance of the switch is demonstrated numerically in simulations. The mN-level contact and release forces are achieved. Pull-in voltage is calculated to be 40V. 1.5mN contact force and 1.2mN release force are achieved when actuation voltage is 50V. The isolation and insertion loss are better than -30.8dB and -0.09dB respective between DC and 10GHz. The fabrication process is presented as well.
Keywords
microswitches; microwave switches; frequency 10 GHz; voltage 40 V; voltage 50 V; Contacts; Force; Microswitches; Radio frequency; Silicon; Stress; RF MEMS switch; SOI; contact force; metal contact; single crystal silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Antennas and Propagation (APCAP), 2014 3rd Asia-Pacific Conference on
Conference_Location
Harbin
Print_ISBN
978-1-4799-4355-5
Type
conf
DOI
10.1109/APCAP.2014.6992772
Filename
6992772
Link To Document