A high power amplifier at Ka-band

Author

Yang Jiansong ; Guo Dechun

Author_Institution

Sch. of Inf. & Electron., Beijing Inst. of Technol., Beijing, China

fYear

2014

fDate

26-29 July 2014

Firstpage

1380

Lastpage

1383

Abstract

In this paper, we describe the design of a high power amplifier at Ka band. To achieve the output power of more than 30dBm, at first we design a one-stage power amplifier, and then design a two-stage amplifier circuit through the directional coupler, and ultimately achieve 31dBm of output power. The design is based on GaN materials to build a physical model of the HEMT. The S-parameters are extracted by using the HFSS software to build the physical structure of the passive components. At last we get a multi-stage amplifier design through ADS simulation.

Keywords

HEMT circuits; III-V semiconductors; S-parameters; directional couplers; gallium compounds; microwave power amplifiers; wide band gap semiconductors; ADS simulation; GaN; HEMT; HFSS software; Ka-band; S-parameters; directional coupler; high power amplifier; multistage amplifier design; one-stage power amplifier; passive components; physical model; physical structure; two-stage amplifier circuit; Gallium nitride; Impedance; Microwave amplifiers; Microwave circuits; Power amplifiers; Power generation; Coupler; GaN; Ka-band; high power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation (APCAP), 2014 3rd Asia-Pacific Conference on

Conference_Location

Harbin

Print_ISBN

978-1-4799-4355-5

Type

conf

DOI

10.1109/APCAP.2014.6992782

Filename

6992782