Title :
Enhanced DC & RF performance of InGaAs based HEMT with fully quaternary InAlGaAs as buffer and barrier layer
Author :
Shukla, Nitin ; Mohapatra, Meryleen ; Panda, Anup Kumar
Author_Institution :
ECE Dept., Siksha `O´ Anusandhan Univ., Bhubaneswar, India
Abstract :
This paper deals with design, modeling and characterization of a 50nm InAlGaAs/InGaAs based HEMT which is compared with a 50nm InAlAs/InGaAs based HEMT. A performance evaluation is done considering the above two HEMTs and the DC and RF characteristics are compared for the same device dimension. For a InAlGaAs/InGaAs based HEMT, a maximum drain current of 331mA/mm at Vgs=-0.2V, a cutoff frequency of 820GHz and a maximum oscillation frequency (fmax) of nearly 1.4THz is obtained which is more as compared to the device parameters obtained for InAlAs/InGaAs based HEMT. This HEMT has a maximum drain current of 297 mA/mm at Vgs=-0.2V, a cutoff frequency of 610GHz and a maximum oscillation frequency (fmax) of nearly 1.3THz.
Keywords :
III-V semiconductors; aluminium compounds; buffer layers; gallium arsenide; high electron mobility transistors; indium compounds; radiofrequency integrated circuits; DC characteristics; HEMT; InAlGaAs-InGaAs; RF characteristics; barrier buffer; buffer buffer; cutoff frequency; device parameters; maximum drain current; maximum oscillation frequency; performance evaluation; size 50 nm; Cutoff frequency; HEMTs; Indium gallium arsenide; Indium phosphide; Logic gates; Performance evaluation; 2DEG; DC & RF characteristics; InAlGaAs/InGaAs HEMT; InGaAs/InAlAs HEMT;
Conference_Titel :
Control, Instrumentation, Communication and Computational Technologies (ICCICCT), 2014 International Conference on
Conference_Location :
Kanyakumari
Print_ISBN :
978-1-4799-4191-9
DOI :
10.1109/ICCICCT.2014.6993075
