Title :
2.5 Gbit/s compact transimpedance amplifier using active inductor in 130nm CMOS technology
Author :
Atef, Mohamed ; Abd-elrahman, Diaa
Author_Institution :
Electr. Eng. Dept., Assiut Univ., Assiut, Egypt
Abstract :
This paper presents the analysis and design of a 2.5 Gbit/s transimpedance amplifier (TIA) realized in 130 nm CMOS technology. The proposed TIA uses a common source (CS) amplifier with active inductive peaking (AP-TIA). The TIA is followed by a post amplifier and an output driver to provide an interface to the measurement setup. The post layout simulation demonstrates that the TIA achieves 46.16 dBΩ transimpedance gain with 2 GHz bandwidth for 2 pF input capacitance including the photodiode, ESD, and pad capacitance. The integrated input referred noise current is 1.062 μArms. The complete optical receiver has 76.78 dBΩ transimpedance gain, and optical sensitivity of -21 dBm for BER= 10-12 at data rate of 2.5 Gbit/s. The TIA alone consumes 5.4 mW whereas the total power consumption of the complete optical receiver is 47.3 mW for 1.8 V single supply voltage.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; inductors; integrated circuit layout; operational amplifiers; optical receivers; AP-TIA; CMOS technology; CS amplifier; ESD; active inductive peaking; bandwidth 2 GHz; bit rate 2.5 Gbit/s; capacitance 2 pF; common source amplifier; compact transimpedance amplifier; current 1.062 muA; integrated input referred noise current; optical receiver; pad capacitance; photodiode; post layout simulation; power 47.3 mW; power 5.4 mW; size 130 nm; voltage 1.8 V; Bandwidth; CMOS integrated circuits; CMOS technology; Capacitance; Gain; Noise; Optical receivers; active inductor; optical receiver; transimpedance amplifier;
Conference_Titel :
Mixed Design of Integrated Circuits & Systems (MIXDES), 2014 Proceedings of the 21st International Conference
Conference_Location :
Lublin
Print_ISBN :
978-83-63578-03-9
DOI :
10.1109/MIXDES.2014.6872165