DocumentCode
1776972
Title
Development of pixel detector in Novel sub-micron technology SOI CMOS 200 nm
Author
Bugiel, Szymon ; Dasgupta, Roma ; Glab, Sebastian ; Idzik, Marek ; Kapusta, Piotr
Author_Institution
AGH Univ. of Sci. & Technol., Cracow, Poland
fYear
2014
fDate
19-21 June 2014
Firstpage
205
Lastpage
208
Abstract
This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in 200 nm SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionising particle (MIP) tracking in particle physics experiments. For this reason the overriding goal of the project was to increase the signal to noise ratio of the readout circuit and sensor.
Keywords
CMOS integrated circuits; radiation detection; silicon-on-insulator; SOI CMOS technology; Si; minimum ionising particle tracking; monolithic silicon-on-insulator pixel sensor; pixel detector; readout circuit; signal to noise ratio; size 200 nm; spectroscopy; CMOS integrated circuits; Capacitance; Detectors; Noise; Prototypes; Silicon; Silicon-on-insulator; Double SOI; SOI sensor; Silicon-On-Insulator (SOI); correlated double sampling (CDS); front-end electronic; pixel detector;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits & Systems (MIXDES), 2014 Proceedings of the 21st International Conference
Conference_Location
Lublin
Print_ISBN
978-83-63578-03-9
Type
conf
DOI
10.1109/MIXDES.2014.6872186
Filename
6872186
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