Implementation of the Bluetooth receiver RF front-end in the CMOS-RF 130 nm technology

Author

Pietron, Daniel ; Siwiec, Krzysztof ; Kopanski, Jakub ; Pleskacz, Witold A.

Author_Institution

Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Warsaw, Poland

fYear

2014

fDate

19-21 June 2014

Firstpage

230

Lastpage

235

Abstract

In this paper, the RF chain for the Bluetooth receiver, implemented in the UMC CMOS 130 nm process, is presented. Project was carried out at the electrical schematic level. Due to the most beneficial parameters, the low-IF architecture was selected. The circuit is formed by a single-end low noise amplifier (LNA), an active balun and a quadrature double-balanced passive mixer. The Bluetooth receiver operates in 2.4 GHz ISM band and complies with Bluetooth´s specification (version 4.0 EDR) [1]. Design goals, such as noise figure (NF) and third order intermodulation point (IIP3), were calculated on the basis of the Bluetooth´s specification. The circuit exhibits a low noise figure of 2.32 dB and dissipates only 3.34 mW, what makes it suitable for low-power applications.

Keywords

Bluetooth; CMOS integrated circuits; baluns; low noise amplifiers; mixers (circuits); Bluetooth receiver RF front-end; CMOS-RF technology; UMC CMOS; active balun; frequency 2.4 GHz; low-IF architecture; noise figure 2.32 dB; power 3.34 mW; quadrature double-balanced passive mixer; single-end low noise amplifier; third order intermodulation point; Bluetooth; Gain; Impedance matching; Mixers; Noise; Receivers; Transistors; Bluetooth; CMOS 130 nm; RF; balun; front-end; low noise amplifier (LNA); low-IF; passive mixer; receiver;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits & Systems (MIXDES), 2014 Proceedings of the 21st International Conference

Conference_Location

Lublin

Print_ISBN

978-83-63578-03-9

Type

conf

DOI

10.1109/MIXDES.2014.6872191

Filename

6872191