Title :
The influence of the selected factors on transient thermal impedance of semiconductor devices
Author :
Gorecki, Krzysztof ; Zarebski, Janusz
Author_Institution :
Dept. of Marine Electron., Gdynia Maritime Univ., Gdynia, Poland
Abstract :
In the paper the method of estimating values of parameters of the compact thermal model of semiconductor devices is described. The input data for this method are the measured waveforms of transient thermal impedance of the investigated device. The output data of the method are: the set of parameters describing the waveform of transient thermal impedance. The usefulness of the presented method is shown for the selected power MOS transistors operating at different cooling conditions.
Keywords :
parameter estimation; power MOSFET; semiconductor device models; thermal analysis; transient analysis; compact thermal model; cooling conditions; input data; output data; parameter estimation values; power MOS transistors; semiconductor devices; transient thermal impedance; Heating; Impedance; Semiconductor device modeling; Thermal resistance; Transient analysis; Transistors; compact thermal model; estimation method; semiconductor devices; thermal parameters; transient thermal impedance;
Conference_Titel :
Mixed Design of Integrated Circuits & Systems (MIXDES), 2014 Proceedings of the 21st International Conference
Conference_Location :
Lublin
Print_ISBN :
978-83-63578-03-9
DOI :
10.1109/MIXDES.2014.6872207
