Title :
Small signal performance of VES-BJT
Author :
Mierzwinski, Piotr
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Warsaw, Poland
Abstract :
VES-BJT is a novel bipolar device in VESTIC technology proposed by W. Maly. This paper extends previously published considerations about expected features of such a device. It contains important information about using earlier introduced definitions in context of calculating small signal parameters of VES-BJT i.e. an unit gain frequency and an unit power gain frequency. Theoretical considerations are illustrated with simulation results. Presented data and methodology are the basis for future development of complete compact model of VES-BJT. Simulation and analytical results confirm the big potential of bipolar devices in VESTIC technology.
Keywords :
bipolar transistors; VES-BJT; VESTIC technology; bipolar device; small signal performance; unit gain frequency; unit power gain frequency; Analytical models; Capacitance; Integrated circuit modeling; Silicon; Simulation; Tin; Transistors; VESTIC; bipolar transistor; compact model; small signal;
Conference_Titel :
Mixed Design of Integrated Circuits & Systems (MIXDES), 2014 Proceedings of the 21st International Conference
Conference_Location :
Lublin
Print_ISBN :
978-83-63578-03-9
DOI :
10.1109/MIXDES.2014.6872214
