Lateral transport in two-dimensional heterojunction interlayer tunneling field effect transistor (Thin-TFET)

The single particle model has been developed for the tunneling between two monolayer two-dimensional (2D) semiconductors [1]. Based on this model, a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) (see Fig.1a) is proposed to achieve very steep subthreshold swing [1]. However, the initial study ignored the lateral transport in the top and bottom 2D layers. In this work, we study the effect of the lateral transport on the on-current area density and the sub-threshold swing (SS) of the Thin-TFET.