• DocumentCode
    1777141
  • Title

    Metal-dichalcogenide hetero-TFETs: Are they a viable option for low power electronics?

  • Author

    Szabo, Aron ; Koester, Steven J. ; Luisier, Mathieu

  • Author_Institution
    Integrated Syst. Lab., ETH Zurich, Zurich, Switzerland
  • fYear
    2014
  • fDate
    22-25 June 2014
  • Firstpage
    19
  • Lastpage
    20
  • Abstract
    Through advanced device simulations, we have demonstrated the feasibility of broken gap heteroTFETs based on strained WTe2-MoS2. The combination of two tunneling path ensures a low average iSS and a relatively high ON-current. To improve this performance and move towards low power electronics, other material combinations such as MoTe2-SnSe2 or WSe2-SnSe2 should be investigated with stress as additional design parameter.
  • Keywords
    field effect transistors; low-power electronics; molybdenum compounds; tungsten compounds; tunnel transistors; ON-current; WTe2-MoS2; advanced device simulation; broken gap hetero-TFET; design parameter; low-power electronics; material combination; metal-dichalcogenide hetero-TFET; tunneling field-effect transistors; tunneling path; Discrete Fourier transforms; Heterojunctions; Logic gates; Low-power electronics; Materials; Transistors; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2014 72nd Annual
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    978-1-4799-5405-6
  • Type

    conf

  • DOI
    10.1109/DRC.2014.6872279
  • Filename
    6872279
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1777141