Title :
Steep slope VO2 switches for wide-band (DC-40 GHz) reconfigurable electronics
Author :
Vitale, W.A. ; Paone, Antonio ; Fernandez-Bolanos, M. ; Bazigos, Antonios ; Grabinski, W. ; Schuler, Andreas ; Ionescu, A.M.
Author_Institution :
NanoLAB, Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
Abstract :
This work proves the feasibility of electrically actuated, CMOS compatible, microwave VO2 switches on SiO2/Si substrates with low variability, 100% yield, better than 109 cycles lifetime, ultra-steep OFF-ON transition and better RF performance than previously reported VO2 switches on Al2O3 substrates (flat -0.6 dB S21-ON with -10 dB S21-OFF at 40 GHz). The extensive characterization of the fabricated switches has led to an optimum design with maximized S21-ON/S21-OFF ratio and validation as a promising solution for wideband reconfigurable electronics.
Keywords :
microwave switches; silicon; silicon compounds; vanadium compounds; RF performance; SiO2-Si; VO2; electrically-actuated CMOS-compatible microwave vanadium oxide switches; fabricated switch characterization; optimum design; steep slope vanadium oxide switches; ultrasteep OFF-ON transition; wideband reconfigurable electronics; Conductivity; Coplanar waveguides; Films; Performance evaluation; Radio frequency; Silicon; Substrates;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872284
