• DocumentCode
    1777174
  • Title

    All-CVD graphene field-effect transistors with h-BN gate dielectric and local back gate

  • Author

    Ebrish, Mona A. ; Koester, Steven J.

  • Author_Institution
    ECE Dept., Univ. of Minnesota-Twin Cities, Minneapolis, MN, USA
  • fYear
    2014
  • fDate
    22-25 June 2014
  • Firstpage
    61
  • Lastpage
    62
  • Abstract
    We have demonstrated operation of locally backgated graphene gFETs with CVD-grown h-BN and graphene, and the results provide important insights into the impact of h-BN on the transport and interfacial properties of these devices.
  • Keywords
    chemical vapour deposition; dielectric properties; field effect transistors; graphene; semiconductor growth; CVD-grown h-BN; all-CVD graphene field-effect transistors; h-BN gate dielectric; interfacial properties; locally back gated graphene gFETs; transport properties; Capacitance; Capacitance-voltage characteristics; Dielectrics; Graphene; Hafnium compounds; Logic gates; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2014 72nd Annual
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    978-1-4799-5405-6
  • Type

    conf

  • DOI
    10.1109/DRC.2014.6872297
  • Filename
    6872297
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1777174