InGaAs MOSFETs with InP drain

InGaAs MOSFETs may find usage in both digital and analogue applications. While most efforts so far have focused on digital applications, further investigations of metrics such as output conductance, voltage gain, and the high frequency properties are required to realize analogue applications. Regrown source/drain (S/D) contacts have been widely applied to III-V MOS technology to reduce the S/D resistances and to avoid the necessary high temperature annealing for doping activation in implantation based processes. To further explore the benefits of the regrown S/D contacts we here use asymmetric MOSFET structures with regrown InGaAs source and InP/InGaAs drain contacts and in particular we study the effects of the drain doping on the transistor performances.