ReRAM device performance study with Transition Metal Disulfide interfacial layer

Transition Metal Oxide (TMO) based resistive random access memory (ReRAM) devices have been a topic of extensive research in the recent years [1]. However, in spite of significant research progress in this area, there are several pending issues that need to be studied. Of these several issues, two of the major issues lie in reducing the electroforming (EF) voltage, and reset current in the current state of the art ReRAM devices. To address these issues, we investigated the impact of inserting an ultra-thin interfacial layer (IL) of Transition Metal Disulfide (TMD) based on WS₂ on the switching characteristics of HfO₂ based ReRAM devices. Our studies indicated that the incorporation of WS₂ IL resulted in a significant reduction in the EF voltage and reset current compared to the control devices. This observation indicates the possibility of achieving low-switching energy ReRAM devices by optimization of TMO/TMD interface and thicknesses.