Title :
The influence of NH3 plasma treatment on Al2O3/HfO2 gate dielectrics of TFTs with atmospheric pressure plasma jet deposited IGZO channel
Author :
Hau-Yuan Huang ; Chien-Hung Wu ; Shui-Jinn Wang ; Kow-Ming Chang ; Hsin-Yu Hsu
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Indium-gallium-zinc-oxide (IGZO) thin-film transistors are fabricated by atmospheric pressure plasma jet (APPJ) technique. HfO2 (25 nm) and Al2O3 (25 nm) are used as the gate dielectric stack. NH3 plasma treatment is applied to optimize the device performance by reducing the gate dielectric leakage and increasing the oxide capacitance. The best performance of the APPJ IGZO TFT is obtained with a 30W-60s NH3 plasma treatment with field-effect mobility of 6.1 cm2/V-s, subthreshold swing of 0.19 V/dec, and on/off current ratio of 108.
Keywords :
aluminium compounds; ammonia; atmospheric pressure; dielectric devices; dielectric materials; gallium compounds; hafnium compounds; indium compounds; plasma deposition; plasma jets; thin film transistors; APPJ technique; Al2O3-HfO2-InGaZnO; NH3; TFT; atmospheric pressure plasma jet technique; channel deposition; field-effect mobility; gate dielectric leakage; gate dielectric stack; oxide capacitance; plasma treatment; power 30 W; size 25 nm; thin-film transistor; time 60 s; Aluminum oxide; Dielectrics; Hafnium compounds; Logic gates; Plasmas; Surface treatment; Thin film transistors;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872347
