Vertical heterojunction of MoS2 and WSe2

Author

Shudong Xiao ; Mingda Li ; Seabaugh, Alan ; Jena, D. ; Xing, Huili Grace

Author_Institution

Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA

fYear

2014

fDate

22-25 June 2014

Firstpage

169

Lastpage

170

Abstract

The development of experimental methods¹ to create stacked structures of layered 2D materials with atomic-plane precision provides opportunities to study a variety of van der Waals heterojunctions that is difficult to fabricate with traditional growth methods. Here, we report the vertical integration of two 2D TMD materials, MoS₂ and WSe₂, to form van der Waals heterojunction. We show that the electrical properties of the heterojunction are controlled by gate voltage and rectification is observed with forward/reverse current ratio ~ 100.

Keywords

Schottky barriers; gold; molybdenum compounds; palladium; rectification; semiconductor heterojunctions; semiconductor materials; semiconductor-metal boundaries; titanium; tungsten compounds; Au-MoS₂; Pd-WSe₂; Schottky-like metal; Ti-MoS₂; atomic plane precision; electrical properties; forward-reverse current ratio; gate voltage; layered 2D materials; metal-semiconductor contacts; n-type molybdenum disulfide semiconductor; p-type tungsten selenide semiconductor; rectification; stacked structures; van der Waals heterojunction; vertical heterojunction;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2014 72nd Annual

Conference_Location

Santa Barbara, CA

Print_ISBN

978-1-4799-5405-6

Type

conf

DOI

10.1109/DRC.2014.6872351

Filename

6872351