• DocumentCode
    1777299
  • Title

    Defining and overcoming the contact resistance challenge in scaled carbon nanotube transistors

  • Author

    Franklin, Aaron D. ; Haensch, Wilfried

  • Author_Institution
    IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2014
  • fDate
    22-25 June 2014
  • Firstpage
    191
  • Lastpage
    192
  • Abstract
    In this work, we define the relevant aspects of a CNTFET contact and the corresponding resistances, putting them into the proper context for a sub-10 nm technology node. Also, new results on the use of different metal-CNT contacts and how they impact the Rc vs. Lc scaling is presented.
  • Keywords
    carbon nanotube field effect transistors; contact resistance; CNTFET contact; contact resistance; metal-CNT contacts; scaled carbon nanotube transistors; CNTFETs; Contact resistance; Logic gates; Market research; Metals; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2014 72nd Annual
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    978-1-4799-5405-6
  • Type

    conf

  • DOI
    10.1109/DRC.2014.6872362
  • Filename
    6872362
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1777299