Nanometer InP electron devices for VLSI and THz applications

Author

Rodwell, Mark J. W. ; Lee, Sang-Rim ; Huang, Chien-Yi ; Elias, Diego ; Chobpattanna, V. ; Rode, J. ; Chiang, Han-Wei ; Choudhary, Prateek ; Maurer, R. ; Urteaga, M. ; Brar, B. ; Gossard, Arthur C. ; Stemmer, Susanne

Author_Institution

ECE, Univ. of California, Santa Barbara, Santa Barbara, CA, USA

fYear

2014

fDate

22-25 June 2014

Firstpage

215

Lastpage

216

Abstract

While the growth of III-As and III-P semiconductors is well-established, and their transport properties well-understood, the performance of high-frequency and VLSI electron devices can still be substantially improved. Here we review design principles, experimental efforts, and intermediate results, in the development of nm and THz electron devices, including nm InAs/InGaAs planar MOSFETs and finFETs for VLSI, InGaAs/InP DHBTs for 0.1-1 THz wireless communications and imaging, and ~5nm InAs/InGaAs Schottky diodes for mid-IR mixing.

Keywords

III-V semiconductors; MOSFET; Schottky diodes; VLSI; arsenic; gallium arsenide; heterojunction bipolar transistors; indium compounds; phosphorus; radiocommunication; terahertz wave devices; terahertz wave imaging; DHBT; III-arsenic semiconductors; III-phosphorus semiconductors; InAs-InGaAs; InGaAs-InP; Schottky diodes; THz electron devices; VLSI; VLSI electron devices; finFET; frequency 0.1 THz to 1 THz; high-frequency electron devices; mid-IR mixing; nanometer indium phosphide electron devices; planar MOSFET; transport properties; wireless communication; Dielectrics; FinFETs; Indium gallium arsenide; Indium phosphide; Logic gates; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2014 72nd Annual

Conference_Location

Santa Barbara, CA

Print_ISBN

978-1-4799-5405-6

Type

conf

DOI

10.1109/DRC.2014.6872374

Filename

6872374