Title :
Investigation of electrostatic body control in accumulated body MOSFETs
Author :
Akbulut, Mustafa B. ; Dirisaglik, Faruk ; Cywar, Adam ; Faraclas, Azer ; Pence, Douglas ; Patel, Jatin ; Steen, Steven ; Nunes, Rafael ; Silva, Hugo ; Gokirmak, Ali
Author_Institution :
Electr. & Comput. Eng., Univ. of Connecticut, Storrs, CT, USA
Abstract :
The authors previously reported wide-range threshold voltage (VT) control and improvement in subthreshold slope (SS) and drain induced barrier lowering (DIBL) in narrow bulk Si Accumulated Body MOSFETs [1-3]. The side-gate structure surrounding the MOSFET body is used for accumulating the body through an independent contact to provide these effects (Fig. 1). In this work, we present a study on the electrostatic body control attained by the side-gates, using experimental and simulated devices.
Keywords :
MOSFET; electrostatics; elemental semiconductors; silicon; DIBL; SS; Si; drain induced barrier lowering; electrostatic body control; experimental devices; narrow bulk accumulated body MOSFET; side-gate structure; simulated devices; subthreshold slope; threshold voltage control; Degradation; Dielectrics; Electrostatics; FinFETs; Logic gates;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872385
