Title :
Tin disulfide (SnS2) thin-film field-effect transistors
Author :
Zschieschang, Ute ; Holzmann, Thomas ; Lotsch, Bettina V. ; Klauk, Hagen
Author_Institution :
Max Planck Inst. for Solid State Res., Stuttgart, Germany
Abstract :
Tin disulfide (SnS2) is a layered metal dichalcogenide semiconductor [1]. Its crystal structure and many of its electrical, optical and catalytic properties are similar to those of molybdenum disulfide (MoS2) [2] which has received significant attention due to the large electron mobilities of over 500 cm2/Vs that have been measured in monolayer MoS2 field-effect transistors (FETs) [3]. A potential advantage of SnS2 over MoS2 is its larger bandgap (2.3 eV for bulk SnS2 [1], compared to 1.2 eV for bulk MoS2 [2]), which may translate into smaller leakage currents and larger on/off ratios in FETs, especially when the channel length is small and the applied drain-source voltage is large. Recently, Song et al. reported an electron mobility of 50 cm2/Vs for FETs based on mechanically exfoliated SnS2 monolayers [4]. These monolayer FETs showed a subthreshold swing of 10 V/decade and a promising on/off ratio of 105, but similar to many metal dichalcogenide FETs reported in the literature, this large on/off ratio was obtained only when the applied drain-source voltage was very small (0.01 V). In addition, the FETs had a negative threshold voltage. However, for many applications, such as active-matrix displays and low-power logic circuits, positive threshold voltages and large on/off ratios at large drain-source voltages are more desirable. Here we demonstrate FETs based on mechanically exfoliated SnS2 multilayers with a thickness of several hundred nanometers that have relatively small field-effect mobilities (0.04 cm2/Vs), but provide a steep subthreshold swing (4 V/decade) and a large on/off ratio (106) even when the applied drain-source voltages are quite large (10 V).
Keywords :
crystal structure; electron mobility; leakage currents; metallic thin films; molybdenum compounds; monolayers; thin film transistors; tin compounds; MoS2; SnS2; active-matrix displays; applied drain-source voltage; bandgap; catalytic properties; channel length; crystal structure; electrical properties; electron mobility; electron volt energy 1.2 eV; layered metal dichalcogenide semiconductor; leakage currents; low-power logic circuits; mechanically exfoliated monolayers; metal dichalcogenide FETs; monolayer field-effect transistors; negative threshold voltage; optical properties; positive threshold voltages; small field-effect mobility; subthreshold swing; tin disulfide thin-film field-effect transistors; Field effect transistors; Logic gates; Silicon; Substrates; Threshold voltage; Tin; Voltage measurement;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872400