DocumentCode :
1777399
Title :
The effect of electric field induced magnetic anisotropy in ferromagnetic resonance in magnetic tunnel junctions
Author :
Yang Lv ; Hui Zhao ; Xiaohui Chao ; Jian-Ping Wang
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Minnesota, Minneapolis, MN, USA
fYear :
2014
fDate :
22-25 June 2014
Firstpage :
291
Lastpage :
292
Abstract :
The electric field induced magnetic anisotropy (EMA) has been observed through ferromagnetic resonance (FMR) in magnetic tunnel junctions (MTJs) by varying the DC bias voltage [1,2]. In this work, however, we show that by changing the magnetization and field setup, the effect of EMA in FMR can be observed and distinguished without an application of DC bias voltage.
Keywords :
ferromagnetic resonance; magnetic anisotropy; magnetic tunnelling; DC bias voltage; EMA effect; FMR; MTJ; electric field induced magnetic anisotropy; ferromagnetic resonance; magnetic tunnel junctions; magnetization; Magnetic anisotropy; Magnetic heads; Magnetic resonance; Magnetic tunneling; Shape; Torque; Tunneling magnetoresistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
Type :
conf
DOI :
10.1109/DRC.2014.6872411
Filename :
6872411
Link To Document :
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