Title :
A high conversion gain millimeter-wave frequency doubler in 65nm CMOS
Author :
Liu Yang ; Li Zhiqun ; Li Qin ; Wang Chong ; Wang Zhigong
Author_Institution :
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China
fDate :
June 30 2014-July 3 2014
Abstract :
This paper presents a high conversion gain doubler-balanced active frequency doubler for millimeter-wave application. The frequency doubler contains an improved push-push structure, two quarter-wavelength transmission lines, and output power enhancement using negative resistor. The 3-dB band of the frequency doubler is 19~28 GHz of input frequency, the maximum conversion gain reaches -5.3 dB, the fundamental rejection is above 55 dB, and the power consumption is 17 mW under 1.2V VDD. The frequency doubler is designed in 65nm CMOS process.
Keywords :
CMOS analogue integrated circuits; frequency multipliers; millimetre wave integrated circuits; CMOS process; frequency 19 GHz to 28 GHz; high conversion gain doubler-balanced active frequency doubler; millimeter-wave application; negative resistor; output power enhancement; power 17 mW; push-push structure; quarter-wavelength transmission lines; size 65 nm; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Frequency conversion; Frequency synthesizers; Gain; Microwave circuits; Resistors; 65nm CMOS; conversion gain; frequency doubler; milllimeter-wave (MMW);
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2014 10th Conference on
Conference_Location :
Grenoble
DOI :
10.1109/PRIME.2014.6872661
