Challenges and benefits of microelectronics for power electronics: from integrated optical driving to optimized power semiconductor switches

Summary form only given. In the view of driving power semiconductor devices such as MOSFET, IGBT or HEMT high voltage transistors, several auxiliary functions are required (floating supply, gate charge/discharge control, isolation, sensors and protections). These auxiliary functions are based on discrete devices, optimized separately from the power transistor, with different technologies and packaging techniques. While novel power semiconductors can be more efficient, faster and operated at higher temperatures, the association of power transistors and their required drivers are still limiting the overall performances. In this context, an innovative approach is introduced where both the power switch and their dedicated electronics are designed at the same time, sharing design constraints and requiring a whole system-level approach. This integration technique necessitates however to control the fabrication and design of both the power transistors and their associated electronics functions. We will first present the limits of monolithically integrated circuits, with different attempts to integrate both a high voltage power transistor and part of its driving circuits. Then, the benefits and challenges of custom IC design on CMOS platforms are presented. Among others, the question of integrating the galvanic insulation unit for the transfer of gate signal orders is discussed. Several designs and characterizations are demonstrated for an integrated optical driving or electromagnetic driving through coreless transformers. Key perspectives towards the integration in the context of novel wide bandgap power devices and multi transistor based power converters will be discussed.