Title :
Comprehensive analysis of traps in InGaP/GaAs HBT by GR noise
Author :
Al Hajjar, Ahmad ; Nallatamby, Jean-Christophe ; Prigent, Michel
Author_Institution :
XLIM, Univ. de Limoges, Brive-la-Gaillarde, France
fDate :
June 30 2014-July 3 2014
Abstract :
In this paper, we will present a comprehensive analysis of low frequency noise in InGaP/GaAs HBT transistor, which is developed in two main axes: first, we report a study of the low frequency noise characteristics of InGaP/GaAs HBT. Our measurements were performed over the frequency range from 100 Hz to 10 MHz, under different biasing conditions and over the temperature range from 300°K to 375°K at low as well as high injection levels. Low frequency (LF) generation recombination (GR) noise measurements revealed an electron trap with activation energy of 0.536 eV. Secondly, from a rigorous physics-based noise simulation using the Langevin approach within the framework of Green´s function, traps detected by temperature-dependent experimental observation are located at the heterointerface δ-InGaP/GaAs, responsible for the GR noise sources. Comparisons between LF noise measurement and numerical physics-based device noise simulation of base TLM, base-collector junction and base-emitter heterojunction allow us to locate precisely the origin of LF noise of InGaP/GaAs HBT.
Keywords :
Green´s function methods; III-V semiconductors; electron traps; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; numerical analysis; semiconductor device noise; GR noise sources; Green´s function framework; HBT; InGaP-GaAs; LF generation recombination noise measurements; Langevin approach; activation energy; base TLM; base-collector junction; base-emitter heterojunction; biasing conditions; comprehensive trap analysis; electron trap; electron volt energy 0.536 eV; frequency 100 Hz to 10 MHz; low frequency noise characteristics; numerical physics-based device noise simulation; temperature-dependent experimental observation; Gallium arsenide; Heterojunction bipolar transistors; Low-frequency noise; Noise measurement; Semiconductor device measurement; Temperature measurement; InGaP/GaAs heterojunction; LF Noise Measurement; Noise corner frequencies; Numerical simulation; Traps;
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2014 10th Conference on
Conference_Location :
Grenoble
DOI :
10.1109/PRIME.2014.6872695
