Simulation methodology for large-bandwidth Track-and-hold microwave circuit

Author

Meyer, Arnaud ; Desgreys, Patricia ; Petit, Herve ; Louis, Bruno ; Petit, Vincent

Author_Institution

Telecom ParisTech, Paris, France

fYear

2014

fDate

June 30 2014-July 3 2014

Firstpage

1

Lastpage

4

Abstract

A step-by-step simulation methodology for large-bandwidth Track-and-hold (T/H) microwave circuit is proposed. A T/H circuit is characterized accurately under the Cadence^© environment. With the consideration of a specific windowing function, linearity simulation analysis could be done effectively. Moreover, the use of an input frequency generation function, in accordance with theoretical calculation, allows to treat the entire input bandwidth (BW). A simulated switched emitter follower (SEF) structure in a 0.13-μm SiGe BiCMOS technology with 24 GHz effective bandwidth and a 4 GS/s clock illustrates our methodology.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; amplifiers; electronic engineering computing; microwave circuits; sample and hold circuits; semiconductor materials; Cadence environment; SiGe; clock; frequency 24 GHz; input frequency generation function; large-bandwidth T-H microwave circuit; large-bandwidth track-and-hold microwave circuit; linearity simulation analysis; silicon-germanium BiCMOS technology; simulated SEF structure; simulated switched emitter follower structure; simulation methodology; size 0.13 mum; step-by-step simulation methodology; theoretical calculation; windowing function; Analytical models; Bandwidth; Harmonic analysis; Integrated circuit modeling; Linearity; Mathematical model; Noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Ph.D. Research in Microelectronics and Electronics (PRIME), 2014 10th Conference on

Conference_Location

Grenoble

Type

conf

DOI

10.1109/PRIME.2014.6872722

Filename

6872722