5×5 SPAD matrices for the study of the trade-offs between fill factor, dark count rate and crosstalk in the design of CMOS image sensors

Author

Moreno-Garcia, Manuel ; del Rio, Rocio ; Guerra, Oscar ; Rodriguez-Vazquez, Angel

Author_Institution

Inst. de Microelectron. de Sevilla, Univ. de Sevilla, Seville, Spain

fYear

2014

fDate

June 30 2014-July 3 2014

Firstpage

1

Lastpage

4

Abstract

CMOS Single Photon Avalanche Diodes (SPADs) are a dedicated type of photodetectors that are attracting increasing interest. Crosstalk and fill factor are magnitudes that become important when dealing with arrays of SPADs. There are trade-offs that involve these two magnitudes and dark count rate (DCR) which are of great interest for the implementation of image sensors. A set of 5×5 matrices of SPADs with different sizes and shapes is designed to study the relationships between FF, crosstalk and DCR, and conceive an accurate behavioural model of SPAD arrays. The testchip is fully operative and preliminary experimental results are presented.

Keywords

CMOS image sensors; avalanche photodiodes; integrated optoelectronics; optical crosstalk; photodetectors; CMOS image sensor design; CMOS single photon avalanche diodes; DCR; SPAD arrays; SPAD matrices; crosstalk; dark count rate; fill factor; photodetectors; CMOS integrated circuits; Crosstalk; Integrated circuit modeling; Photonics; Resistance; Semiconductor device modeling; Shape;

fLanguage

English

Publisher

ieee

Conference_Titel

Ph.D. Research in Microelectronics and Electronics (PRIME), 2014 10th Conference on

Conference_Location

Grenoble

Type

conf

DOI

10.1109/PRIME.2014.6872752

Filename

6872752