Formation of complex structure of laser fields for the radiation effect on impurities in nano-optoelectronics

New method of formation of complicated laser fields for the purposes of precise controllable action of energy on working components in nano-optoelectronics is proposed and considered both theoretically and experimentally. The method consists in using the field with preliminary modulated wavefront to illuminate a phase diffraction element. The cross-modulated response of this scheme gives the resulting beams, which possesses the diffraction limit of the radiation and are stable relative to phase distortions in a technological track.