A new method of designing UHF FET Colpitts oscillator

Author

Ulansky, V.V. ; Elsherif, H.M.

Author_Institution

Dept. of Electron., Nat. Aviation Univ., Kiev, Ukraine

fYear

2014

fDate

15-18 April 2014

Firstpage

388

Lastpage

392

Abstract

This paper describes a newly developed design method of UHF field-effect transistor (FET) Colpitts oscillator minimizing the phase noise and total harmonic distortion (THD) of the generated signal. A new simple procedure is used to calculate the values of the oscillator components. The proposed method has been applied to the design and simulation of the Colpitts oscillator operating with a pseudomorphic heterojunction FET (PHJFET) at frequency of 1GHz. The simulated phase noise is -148.8dBc/Hz at 1 MHz offset from the carrier frequency. The THD is 4.2%. The power consumption is 2.4mW from a 3V supply. The implemented oscillator circuit confirms the efficiency of the proposed design method.

Keywords

UHF field effect transistors; UHF oscillators; harmonic distortion; phase noise; Colpitts oscillator; UHF FET; field-effect transistor; frequency 1 GHz; phase noise; power 2.4 mW; power consumption; pseudomorphic heterojunction FET; total harmonic distortion; voltage 3 V; Capacitance; Inductors; Mathematical model; Microwave circuits; Microwave oscillators; Phase noise; characteristic impedance; coil quality factor; figure of merit; phase noise; total harmonic distortion;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on

Conference_Location

Kyiv

Print_ISBN

978-1-4799-4581-8

Type

conf

DOI

10.1109/ELNANO.2014.6873447

Filename

6873447