High performance VCO for VHF air-band transceiver

Author

Ulansky, V.V. ; Kolesnik, A.A. ; Elsherif, H.M.

Author_Institution

Dept. of Electron., Nat. Aviation Univ., Kiev, Ukraine

fYear

2014

fDate

15-18 April 2014

Firstpage

378

Lastpage

382

Abstract

A new complementary junction field effect transistor (JFET) voltage-controlled oscillator (VCO) is presented for VHF band. The VCO circuit provides almost linear negative differential resistance (NDR) region that can be precisely set with three external resistors. Mathematical model of the VCO is developed. The model is investigated theoretically and by Spice simulation. The theoretical concepts are verified by designing a VCO for VHF air band transceiver, which covers the frequency band between 103.1 and 169.5 MHz At a 3-V power supply and power consumption 12 mW, the designed VCO has a phase noise of -124 dBc/Hz at 10 kHz offset from carrier and achieves a very good figure of merit (FOM) performance of -196 dBc/Hz.

Keywords

VHF oscillators; circuit noise; junction gate field effect transistors; mathematical analysis; resistors; semiconductor device models; semiconductor device noise; transceivers; voltage-controlled oscillators; FOM; JFET; NDR region; Spice simulation; VCO; VHF air-band transceiver; complementary junction field effect transistor; figure of merit; frequency 103.1 MHz to 169.5 MHz; linear negative differential resistance region; mathematical model; phase noise; power 12 mW; resistor; voltage 3 V; voltage-controlled oscillator; Decision support systems; JFETs; Phase noise; Resistance; Voltage-controlled oscillators; negative differential resistance; phase noise; power consumption; voltage-controlled oscillator;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on

Conference_Location

Kyiv

Print_ISBN

978-1-4799-4581-8

Type

conf

DOI

10.1109/ELNANO.2014.6873449

Filename

6873449