Ultra-broadband UTC-PD beyond 110 GHz at 0 V for future photonic integration

Author

Umezawa, Toshimasa ; Akahane, Kouichi ; Yamamoto, Naoji ; Inagaki, K. ; Kanno, Atsushi ; Kawanishi, Tetsuyas

Author_Institution

Lightwave Device Lab., Nat. Inst. of Inf. & Commun. Technol., Koganei, Japan

fYear

2014

fDate

20-23 Oct. 2014

Firstpage

450

Lastpage

453

Abstract

We have successfully realized the non-bias operation of an ultra-wide bandwidth uni-traveling-carrier photodetector (UTC-PD) using a low carrier concentration of 3 × 10¹⁴ cm^-3 in the carrier collection layer for future high-density photonic integration. A 3-dB bandwidth above 110 GHz was confirmed without a bias circuit. In this paper, we discuss the proposed design and the experimental results obtained for the frequency response and maximum RF output power.

Keywords

integrated optics; optical design techniques; photodetectors; carrier collection layer; frequency 110 GHz; frequency response; high-density photonic integration; low carrier concentration; maximum RF output power; non-bias operation; optical design; ultrabroadband UTC-PD; ultrawide bandwidth uni-traveling-carrier photodetector; voltage 0 V; Absorption; Bandwidth; Capacitance; Frequency response; Photoconductivity; Photonics; Radio frequency; photonic integration; photoreceiver; ultra-broadband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics (MWP) and the 2014 9th Asia-Pacific Microwave Photonics Conference (APMP), 2014 International Topical Meeting on

Conference_Location

Sapporo

Type

conf

DOI

10.1109/MWP.2014.6994596

Filename

6994596