TE-absorption profile in plasmonic-capped Sic nanorods under Otto configuration

Author

Demydenko, Yurii ; Juodkazis, Saulius ; Lozovski, Valeri

Author_Institution

V. Lashkariov Inst. of Semicond. Phys., Kiev, Ukraine

fYear

2014

fDate

15-18 April 2014

Firstpage

203

Lastpage

206

Abstract

The model for the optical response of composite metal-dielectric nanorods located on the surface of dielectric, based on a self-consistent analytical approach is proposed. The absorption of evanescent TE-polarized waves under Otto configuration is studied theoretically in the frame of the effective susceptibility concept. A possibility of an effective control of absorption of TE waves by tuning the height of the plasmonic cap is investigated. Configurational resonances are considered as a probable physical explanation of an origin of the absorption peaks caused by the TE-surface wave excitation.

Keywords

SCF calculations; nanocomposites; nanorods; optical susceptibility; plasmonics; semiconductor-metal boundaries; silicon compounds; wide band gap semiconductors; Otto configuration; SiC; TE wave absorption; TE-absorption profile; TE-surface wave excitation; absorption peaks; composite metal-dielectric nanorods; configurational resonances; dielectric surface; effective susceptibility; evanescent TE-polarized waves; optical response; plasmonic-capped SiC nanorods; self-consistent analytical approach; Absorption; Dielectrics; Gold; Optical sensors; Optical surface waves; Silicon carbide; Surface waves; configurational resonance; effective susceptibility; nanocomposite; optical absorptio; plasmon-polariton;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on

Conference_Location

Kyiv

Print_ISBN

978-1-4799-4581-8

Type

conf

DOI

10.1109/ELNANO.2014.6873923

Filename

6873923