Perfection factors of photovoltaic cells with p-n junction structure

Author

Samotovka, Volodymyr

Author_Institution

Electron. Dept., Nat. Tech. Univ. of Ukraine “KPI”, Kiev, Ukraine

fYear

2014

fDate

15-18 April 2014

Firstpage

207

Lastpage

210

Abstract

In this work research results for photovoltaic cells with different efficiencies and fill factors are given. Perfection factors´ expressions are theoretically derived using modified Bessel functions. Bessel functions have arguments that proportional to temperature, p-n junction´s m factor and amplitudes of used harmonic voltages with different frequencies. It is determined that the integral perfection index is the most differential frequency voltage´s value measured when load is less than effective resistance of photovoltaic structure with p-n junction.

Keywords

Bessel functions; p-n junctions; solar cells; Bessel functions; differential frequency; effective resistance; fill factors; harmonic voltage; integral perfection index; p-n junction m factor; p-n junction structure; perfection factors; photovoltaic cells; Conferences; Electrical resistance measurement; Harmonic analysis; P-n junctions; Photovoltaic cells; Resistance; Voltage measurement; differential frequency; effective factor; effective resistance; modified Bessel functions; photovoltaic cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on

Conference_Location

Kyiv

Print_ISBN

978-1-4799-4581-8

Type

conf

DOI

10.1109/ELNANO.2014.6873924

Filename

6873924