Comparison of wet and vapor methods of porous silicon formation on solar cells surface

Author

Obukhova, Tetyana ; Tanchuk, Igor

Author_Institution

Microelectron. Dept., NTUU “KPI”, Kiev, Ukraine

fYear

2014

fDate

15-18 April 2014

Firstpage

154

Lastpage

155

Abstract

In the paper the processes of formation of porous silicon via wet chemical etching and vapor chemical etching on surface of solar cells were studied. Dependence of main solar cells parameters from etching time for two different method of porous silicon formation was investigated. It was shown that in the case of wet chemical etching efficiency of solar cells increased due to short circuit current (formation of antireflective coating) and in the case of vapor chemical etching due to open circuit voltage (formation of passivating coating).

Keywords

antireflection coatings; elemental semiconductors; etching; passivation; porous semiconductors; short-circuit currents; silicon; solar cells; Si; antireflective coating; open circuit voltage; passivating coating formation; porous silicon formation; short circuit current; solar cells surface; vapor chemical etching; wet chemical etching; Chemicals; Coatings; Etching; Ions; Photovoltaic cells; Silicon; antireflection coating; chemical etching; porous silicon; solar cell; vapor etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on

Conference_Location

Kyiv

Print_ISBN

978-1-4799-4581-8

Type

conf

DOI

10.1109/ELNANO.2014.6873933

Filename

6873933