DocumentCode
1778578
Title
Ballistic transport in threenitrids
Author
Bol, Konstantin ; Moskaliuk, Volodymyr
Author_Institution
Phys. & Biomed. Electron. Dept., Nat. Tech. Univ. of Ukraine Kyiv Polytech. Inst., Kiev, Ukraine
fYear
2014
fDate
15-18 April 2014
Firstpage
168
Lastpage
170
Abstract
Based on relaxation equations of energy balance, momentum and occupation of valleys was modelling the transitional effect "overshoot” of drift velocity in threenitrids osn the example of aluminium nitride, gallium nitride, indium nitride. The possibility of multiple exceeding over the stationary values.
Keywords
III-V semiconductors; aluminium compounds; ballistic transport; gallium compounds; indium compounds; many-valley semiconductors; wide band gap semiconductors; AlN; GaN; InN; aluminium nitride; ballistic transport; drift velocity; energy balance; gallium nitride; indium nitride; relaxation equations; stationary values; threenitrids; transitional effect; valley momentum; valley occupation; Electric fields; Electron mobility; Equations; Gallium nitride; Indium; Mathematical model; Temperature measurement; „overshoot” of drift velocity; aluminium nitride; energy relaxation; gallium nitride; indium nitride; intervalley relaxation; multivalley semiconductors; times of momentum;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on
Conference_Location
Kyiv
Print_ISBN
978-1-4799-4581-8
Type
conf
DOI
10.1109/ELNANO.2014.6873937
Filename
6873937
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