Simulation of influence of template size on misfit dislocation in nanostructures

Author

Timofeyev, Vladimir ; Faleyeva, Elena ; Semenovskaya, Elena ; Andryushchenko, Andrew ; Osinsky, Vladimyr ; Lyahova, Natalia ; Sukhoviy, Nina

Author_Institution

Dept. of Phys. & Biomed. Electron., Nat. Tech. Univ. of Ukraine KPI, Kiev, Ukraine

fYear

2014

fDate

15-18 April 2014

Firstpage

191

Lastpage

193

Abstract

The paper considers a model of misfit dislocation determination to establish the dislocation free contour map for nanotemplate geometrical size. Dislocation free contour map has been obtained for GaN and GaAs nanostructures on the substrate of AlN and Si, respectively. The results of Burger dislocation determination in nanostructures are proved by experiment and show good agreement.

Keywords

III-V semiconductors; aluminium compounds; dislocation density; gallium arsenide; nanofabrication; nanostructured materials; wide band gap semiconductors; AlN; Burger dislocation; GaAs-Al₂O₃; GaN-Al₂O₃; Si; dislocation density; dislocation free contour map; misfit dislocation; nanostructured material; nanotemplate geometrical size; template size; Films; Gallium arsenide; Lattices; Mathematical model; Nanostructures; Silicon; Substrates; dislocation; nanostructures; template;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on

Conference_Location

Kyiv

Print_ISBN

978-1-4799-4581-8

Type

conf

DOI

10.1109/ELNANO.2014.6873943

Filename

6873943