Title :
Simulation of influence of template size on misfit dislocation in nanostructures
Author :
Timofeyev, Vladimir ; Faleyeva, Elena ; Semenovskaya, Elena ; Andryushchenko, Andrew ; Osinsky, Vladimyr ; Lyahova, Natalia ; Sukhoviy, Nina
Author_Institution :
Dept. of Phys. & Biomed. Electron., Nat. Tech. Univ. of Ukraine KPI, Kiev, Ukraine
Abstract :
The paper considers a model of misfit dislocation determination to establish the dislocation free contour map for nanotemplate geometrical size. Dislocation free contour map has been obtained for GaN and GaAs nanostructures on the substrate of AlN and Si, respectively. The results of Burger dislocation determination in nanostructures are proved by experiment and show good agreement.
Keywords :
III-V semiconductors; aluminium compounds; dislocation density; gallium arsenide; nanofabrication; nanostructured materials; wide band gap semiconductors; AlN; Burger dislocation; GaAs-Al2O3; GaN-Al2O3; Si; dislocation density; dislocation free contour map; misfit dislocation; nanostructured material; nanotemplate geometrical size; template size; Films; Gallium arsenide; Lattices; Mathematical model; Nanostructures; Silicon; Substrates; dislocation; nanostructures; template;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on
Conference_Location :
Kyiv
Print_ISBN :
978-1-4799-4581-8
DOI :
10.1109/ELNANO.2014.6873943
