DocumentCode
1778597
Title
Contact properties of ultrasmall carbon nanotube transistors from Ab-initio
Author
Fediai, Artem ; Ryndyk, Dmytry ; Cuniberti, Gianaurelio
Author_Institution
Inst. for Mater. Sci. & Max Bergmann Center of Biomater., Tech. Univ. Dresden, Dresden, Germany
fYear
2014
fDate
15-18 April 2014
Firstpage
110
Lastpage
114
Abstract
Based on large-scale ab-initio calculations contact properties of carbon nanotubes field effect transistors with 9-nm channel were analyzed. We have found that the internal part of the nanotube is metalized, while the uncovered CNT portion is p-doped due to the influence of the metal. Our findings can explain unique scaling of the CNT-FETs based on first-principles.
Keywords
ab initio calculations; carbon nanotube field effect transistors; C; CNT-FET scaling; first-principle; large-scale ab-initio calculations contact property; size 9 nm; ultrasmall carbon nanotube field effect transistor; uncovered CNT portion; Carbon; Carbon nanotubes; Discrete Fourier transforms; Doping; Electrodes; Metals; Transistors; ab-initio; carbon nanotube transistor; contact;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on
Conference_Location
Kyiv
Print_ISBN
978-1-4799-4581-8
Type
conf
DOI
10.1109/ELNANO.2014.6873948
Filename
6873948
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