Relaxation processes analysis in heterotransistors with systems of quantum wells and quantum dots

The modeling and comparative analysis of the relaxation processes in four different heterostructures: traditional heterotransistor, heterotransistor with two channels (heterojunctions), heterotransistor with two channels and a system of quantum dots (QDs), as well as heterotransistor with two channels and two systems of quantum dots were made. It is shown that the heating of electrons in high electric fields in heterotransistors with embedded quantum dots with two heterojunctions is less intensive, and the values of the drift velocity is higher than in the other structures under study.