A low-voltage current reference with high immunity to EMI

Author

Cordova, David ; Toledo, Pedro ; Fabris, Eric

Author_Institution

NSCAD Microeltronica, PGMICRO- UFRGS, Porto Alegre, Brazil

fYear

2014

fDate

1-5 Sept. 2014

Firstpage

1

Lastpage

6

Abstract

An electromagnetic interference (EMI) source can significantly degrade the performance of a current reference since its finite Power Supply Rejection Ratio (PSRR) of the later. For that reason A modified current reference with high immunity to EMI and a new current mirror structure insensitive to induced EMI are proposed based on the classic boot-strapped current and compared to other current reference structures. Simulations results using XFAB 0.18 μm CMOS process demonstrate the high immunity to EMI of the proposed current reference. Improvements in the PSRR of 48dB and 32dB in comparison to the classical version and other implementations respectively.

Keywords

CMOS integrated circuits; current mirrors; electromagnetic interference; reference circuits; EMI; PSRR; XFAB CMOS process; boot-strapped current; current mirror structure; electromagnetic interference source; finite power supply rejection ratio; low-voltage current reference; size 0.18 mum; Electromagnetic interference; MOS devices; Mirrors; Power supplies; Resistors; Sensitivity; Transistors; current reference; electromagnetic compatibility; electromagnetic interference;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits and Systems Design (SBCCI), 2014 27th Symposium on

Conference_Location

Aracaju

Type

conf

DOI

10.1145/2660540.2660989

Filename

6994641