DocumentCode :
1778614
Title :
A 2-transistor sub-1V low power temperature compensated CMOS voltage reference
Author :
Olmos, Alfredo ; Pablo, Juan ; Brito, Martinez ; Jorge, Filipe ; Ferreira, Andre ; Chavez, Fernando ; Soares Lubaszewski, Marcelo
Author_Institution :
Design Center - CEITEC S.A. Semicond., Porto Alegre, Brazil
fYear :
2014
fDate :
1-5 Sept. 2014
Firstpage :
1
Lastpage :
5
Abstract :
This paper presents the design of a CMOS sub-1V voltage reference using a 2-transistor Self-Cascode MOSFET structure able to get low power consumption, temperature compensation, and small area. An efficient design procedure applied to this simple topology relying on NMOS transistors with different threshold voltages allows attaining large immunity against bias current and supply voltage variations. Besides that, the two transistors can operate in weak, moderate, or strong inversion making the design flexible in terms of area and power consumption. Implemented in a 0.18 μm standard CMOS technology, the circuit provides a 400mV voltage reference with a variation of ±0.18% from -20°C to 75°C (or less than 15ppm/°C), operates from 3.6V down to 800mV while biased with a 5nA resistor-less PTAT current source that varies ±30% over PVT, and consumes less than 20nA. The complete circuit including the current source and the 2-transistor Self-Cascode MOSFET occupies an area of 0.01mm2.
Keywords :
CMOS integrated circuits; MOSFET circuits; compensation; integrated circuit design; low-power electronics; reference circuits; 2-transistor low power temperature compensated CMOS voltage reference design; 2-transistor self-cascode MOSFET structure; NMOS transistors; bias current; current 5 nA; current source; low power consumption; size 0.18 mum; supply voltage variations; temperature -20 degC to 75 degC; threshold voltages; voltage 3.6 V to 400 mV; CMOS integrated circuits; MOSFET; Radiofrequency identification; Temperature measurement; Threshold voltage; Voltage measurement; CMOS integrated circuit design; Low power; low voltage; temperature compensated voltage reference;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuits and Systems Design (SBCCI), 2014 27th Symposium on
Conference_Location :
Aracaju
Type :
conf
DOI :
10.1145/2660540.2660994
Filename :
6994646
Link To Document :
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