Title :
SiGe HBT mm-wave DC coupled ultra-wide-band low noise monolithic amplifiers
Author :
Ponchet, A.F. ; Bastida, E.M. ; Panepucci, R.R. ; Tenenbaum, Stefan ; Swart, J.W.
Abstract :
Design guide lines are given for developing SiGe HBT mm-wave d.c. coupled ultra-wide-band low noise monolithic amplifiers. An ultra wide band LNA and two mm-wave TIAs for 40 Gbps and 100 Gbps applications are proposed. The LNA has S21=11 dB and a 3-dB bandwidth of 88 GHz. The 40 Gbps TIA has a new topology, allowing a DC coupled performance, 54 dBΩ transimpedance gain, 37 GHz bandwidth, consumes 59 mW power and its area is 0.23 mm2. The 100 Gbps TIA has 43 dBΩ transimpedance gain, 79.4 GHz bandwidth, consumes 37 mW power and its area is only 0.05 mm2. These amplifiers are implemented in a 0.12 μm SiGe HBT technology (fT = 350 GHz/fmax = 450 GHz). Output eye diagram plots were obtained to verify their performances.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; low noise amplifiers; millimetre wave amplifiers; millimetre wave bipolar transistors; semiconductor materials; ultra wideband technology; DC coupled performance; HBT mm-wave DC coupled ultra-wide-band low noise monolithic amplifiers; SiGe; bandwidth 37 GHz; bandwidth 79.4 GHz; bandwidth 88 GHz; bit rate 100 Gbit/s; bit rate 40 Gbit/s; frequency 350 GHz; mm-wave TIAs; output eye diagram plots; power 37 mW; power 59 mW; size 0.12 mum; ultra wide band LNA; Bandwidth; Gain; Heterojunction bipolar transistors; Inductors; Layout; Noise; 100 Gbps Ethernet Circuits; BiCMOS technology; MMICs; mm-wave ultra wide band amplifiers; optical receivers; transimpedance amplifiers;
Conference_Titel :
Integrated Circuits and Systems Design (SBCCI), 2014 27th Symposium on
Conference_Location :
Aracaju
DOI :
10.1145/2660540.2660996
